inchange semiconductor isc product specification isc silicon pnp power transistor 2SB994 description collector-emitter breakdown voltage- : v (br)ceo = -60v(min) collector power dissipation- : p c = 30w@ t c = 25 low collector saturation voltage- : v ce(sat) = -1.0v(max)@ i c = -3a complement to type 2sd1354 applications designed for audio frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -7 v i c collector current-continuous -3 a i b base current-continuous -0.5 a collector power dissipation @t a =25 1.5 p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB994 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma; i b = 0 -60 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -1.0 v v be (on) base-emitter on voltage i c = -0.5a; v ce = -5v -1.0 v i cbo collector cutoff current v cb = -60v; i e = 0 -100 a i ebo emitter cutoff current v eb = -7v; i c = 0 -100 a h fe-1 dc current gain i c = -0.5a; v ce = -5v 60 200 h fe-2 dc current gain i c = -3a; v ce = -5v 20 c ob output capacitance i e = 0; v cb = -10v; f test = 1mhz 150 pf f t current-gain?bandwidth product i c = -0.5a; v ce = -5v 9 mhz switching times t on turn-on time 0.4 s t stg storage time 1.7 s t f fall time v cc = -30v, r l = 15 , i b1 = -i b2 = -0.2a, 0.5 s ? h fe- 1 classifications o y 60-120 100-200 isc website www.iscsemi.cn 2
|
